Semiconductor package and package on package having the same

ABSTRACT

A semiconductor package and a package on package are provided. The semiconductor package includes a substrate; a semiconductor chip attached to a surface of the substrate; connecting conductors disposed on the surface of the substrate; a mold formed on the substrate and in which the connecting conductors and the semiconductor chip are provided; and connecting via holes extending through the mold and exposing the connecting conductors. With respect to a first connecting via hole of the connecting via holes, a planar distance between a first connecting conductor exposed by the first connecting via hole and an entrance of the first connecting via hole is not uniform.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Continuation of U.S. application Ser. No.13/244,506, filed on Sep. 25, 2011, which claims priority from KoreanPatent Application No. 10-2010-0131508 filed on Dec. 21, 2010 in theKorean Intellectual Property Office, the contents of which in itsentirety are herein incorporated by reference.

BACKGROUND

1. Field

Exemplary embodiments to a semiconductor package and a package onpackage having the same.

2. Description of the Related Art

Semiconductor packages are increasingly developed to meet requirementsincluding multiple functions, high capacity, compactness, and smallsize. To keep pace with the development, a system in package (SIP) hasbeen proposed, in which multiple semiconductor packages are integratedinto one single semiconductor package, enabling high capacity andmultiple functions while reducing the size of the semiconductor package.

One technology implemented in the SIP is to vertically stacksemiconductor packages that are individually assembled and haveundergone electric tests. This is referred to as a package on package(POP) or a stacked package.

In general, when an upper semiconductor package is stacked on a lowersemiconductor package, a plurality of connecting conductors are used toelectrically connect the lower semiconductor package and the uppersemiconductor package. Here, a connecting conductor of the lowersemiconductor package and a connecting conductor of the uppersemiconductor package may be connected to each other through connectingvia holes.

However, as semiconductor packages become smaller, a pitch between theconnecting via holes gradually decreases. Accordingly, internal spacesof the connecting via holes are filled up by the connecting conductorsof the upper and lower semiconductor packages, causing overflow, andshort circuits between adjacent connecting conductors.

SUMMARY

One or more exemplary embodiments provide a semiconductor package whichcan prevent short circuit between adjacent connecting conductors.

One or more exemplary embodiments also provide a package on packagewhich can prevent short circuit between adjacent connecting conductors.

According to an aspect of an exemplary embodiment, there is provided asemiconductor package including a substrate; a semiconductor chipattached to a surface of the substrate; a plurality of connectingconductors disposed on the surface of the substrate; a molding memberformed on the substrate and in which the plurality of connectingconductors and the semiconductor chip are provided; and a plurality ofconnecting via holes extending through the molding member and exposingthe plurality of connecting conductors, respectively, wherein withrespect to a first connecting via hole of the plurality of connectingvia holes, a planar distance between a first connecting conductorexposed by the first connecting via hole and an entrance of the firstconnecting via hole is not uniform.

According to another aspect of an exemplary embodiment, there isprovided a semiconductor package including a substrate; a semiconductorchip attached to a surface of the substrate; a plurality of connectingconductors disposed on the surface of the substrate; a molding memberformed on the substrate and having a space for the plurality ofconnecting conductors and the semiconductor chip; and a plurality ofconnecting via holes extending through the molding member and exposingthe plurality of connecting conductors, respectively, wherein a centerof a first connecting via hole among the plurality of connecting viaholes is at a different position from a center of a corresponding firstconnecting conductor with respect to the substrate.

According to another aspect of an exemplary embodiment, there isprovided a package on package including a first semiconductor packageincluding a first substrate, a first semiconductor chip attached to asurface of the first substrate, a plurality of connecting conductorsdisposed on the surface of the first substrate, a molding member formedon the first substrate and having a space for the plurality ofconnecting conductors and the first semiconductor chip, and a pluralityof connecting via holes extending through the molding member andexposing the plurality of connecting conductors, respectively; and asecond semiconductor package including a second substrate and a secondsemiconductor chip attached to a surface of the second substrate andstacked on the first semiconductor package, wherein with respect to afirst connecting via hole of the plurality of connecting via holes ofthe first semiconductor package, a planar distance between a firstconnecting conductor exposed by the first connecting via hole and anentrance of the first connecting via hole is not uniform.

According to another aspect of an exemplary embodiment, there isprovided a semiconductor package, the semiconductor package including asubstrate; a semiconductor chip attached to a surface of the substrate;a plurality of connecting conductors which provide connections to thesemiconductor ship; and a mold formed on the substrate for holding thesemiconductor chip and comprising a plurality of via holes which exposecorresponding ones of the connecting conductors through the mold,wherein, for a first via hole of the plurality of via holes, a planardistance between a connecting conductor exposed by the first via holeand an entrance of the first via hole is not uniform.

BRIEF DESCRIPTION OF THE DRAWINGS

The above and other aspects will become more apparent by describing indetail exemplary embodiments with reference to the attached drawings inwhich:

FIG. 1 is a cross-sectional view illustrating a semiconductor packageaccording to an exemplary embodiment;

FIGS. 2A to 2C are plan views illustrating different arrangements of afirst connecting via hole relative to a first connecting conductoraccording to exemplary embodiments;

FIGS. 3A to 3C are cross-sectional views illustrating variously shapedsidewalls of the first connecting via hole according to exemplaryembodiments;

FIG. 4 is a view illustrating that a connecting conductor region todefine a plurality of connecting conductors arranged on a substrateaccording to an exemplary embodiment;

FIG. 5 is a partially enlarged view of an ‘A’ portion of FIG. 4;

FIG. 6 is a view illustrating a process of stacking an uppersemiconductor package on a semiconductor package according to anexemplary embodiment; and

FIG. 7 is a cross-sectional view illustrating a package on packagehaving an upper semiconductor package stacked on a semiconductor packageaccording to an exemplary embodiment.

DETAILED DESCRIPTION

Advantages and features of the present inventive concept and methods ofaccomplishing the same may be understood more readily by reference tothe following detailed description of exemplary embodiments and theaccompanying drawings. The present inventive concept may, however, beembodied in many different forms and should not be construed as beinglimited to the exemplary embodiments set forth herein. Rather, theseexemplary embodiments are provided so that this disclosure will bethorough and complete and will fully convey the present inventiveconcept to those skilled in the art, and the present inventive conceptwill only be defined by the appended claims. In the drawings, thethickness of layers and regions are exaggerated for clarity.

It will be understood that when an element such as a layer, region orsubstrate is referred to as being “on” or extending “onto” anotherelement, it can be directly on or extend directly onto the other elementor intervening elements may also be present. In contrast, when anelement is referred to as being “directly on” or extending “directlyonto” another element, there are no intervening elements present. Itwill also be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. In contrast, when an element is referred to as being “directlyconnected” or “directly coupled” to another element, there are nointervening elements present.

Like numbers refer to like elements throughout. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Spatially relative terms, such as “below,” “beneath,” “lower,” “above,”“upper,” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures.

Exemplary embodiments described herein will be described referring toplan views and/or cross-sectional views by way of ideal schematic views.Accordingly, the exemplary views may be modified depending onmanufacturing technologies and/or tolerances. Therefore, the exemplaryembodiments are not limited to those shown in the views, but includemodifications in configuration formed on the basis of manufacturingprocesses. Therefore, regions exemplified in the figures have schematicproperties, and shapes of regions shown in the figures exemplifyspecific shapes of regions of elements and not intended to limit aspectsof the present inventive concept.

First, a semiconductor package according to an exemplary embodiment willbe described. FIG. 1 is a cross-sectional view illustrating asemiconductor package according to an exemplary embodiment.

Referring to FIG. 1, the semiconductor package 100 includes a substrate110, a semiconductor chip 140, a plurality of connecting conductors 135,molding member 150, and a plurality of connecting via holes 152 and 157.

The substrate 110 may be a board for a package, and may include, forexample, a printed circuit board or a ceramic board. Further, as shownin FIG. 1, insulation layers 130 and 120 may be formed on top and bottomsurfaces of the substrate 110, respectively. Pads 132 connected with theplurality of connecting conductors 135 may be formed on the insulationlayer 130 formed on the top surface of the substrate 110. Pads 122connected with a plurality of solder balls 125 may be formed on theinsulation layer 120 formed on the bottom surface of the substrate 110.

The plurality of connecting conductors 135 may be connected toconnecting conductors formed on the bottom surface of an uppersemiconductor package when stacking the plurality of semiconductorpackages, to then be electrically connected to the upper semiconductorpackage. In addition, the solder balls 125 may electrically connect thesemiconductor packages to a module board or a main circuit board.

The semiconductor chip 140 may be attached to the top surface of thesubstrate 110. As illustrated, when the semiconductor chip 140 isreferred to as being attached to the top surface of the substrate 110,it can be directly on or extend directly onto the insulation layer 130formed on the substrate 110. For example, FIG. 1 shows the semiconductorchip 140 directly on the insulation layer 130. However, as justdiscussed, this is only an example. The semiconductor chip 140 mayinclude, for example, a logic device such as a microprocessor, but isnot limited thereto.

The semiconductor chip 140 may be stacked on the substrate 110 by, forexample, a flip chip bonding process. Accordingly, the plurality ofconductive chip bumps 145 are disposed between the substrate 110 and thesemiconductor chip 140 to electrically connect the substrate 110 to thesemiconductor chip 140. The plurality of conductive chip bumps 145 maybe formed by, for example, a soldering process.

The plurality of connecting conductors 135 are disposed on the topsurface of the substrate 110. The plurality of connecting conductors 135may be formed of a solder material, and may have a substantiallyspherical or hemispherical shape.

The molding member 150 is formed on the substrate 110 and providesspaces for and structural support for the plurality of connectingconductors 135 and the semiconductor chip 140. More specifically, themolding member 150 may be formed on the top surface of the substrate 110so as to surround lateral surfaces of the semiconductor chip 140 whilefilling a space between the semiconductor chip 140 and the substrate110. Connecting via holes 152 and 157 to be described later may beformed in the molding member 150. The molding member 150 may includeepoxy molding compound (EMC), polyimide, or the like.

FIG. 1 illustrates an exemplary embodiment in which the top surface ofthe semiconductor chip 140 is exposed because the molding member 150 hasa height that is substantially the same as or less than the height ofthe semiconductor chip 140. That is to say, in a case where the topsurface of the semiconductor chip 140 is exposed to the outside of themolding member 150, the overall thickness of the semiconductor package100 and the overall thickness of a stacked package structure arereduced. In addition, various advantages are rendered, including animproved heat dissipation characteristic, increased resistance withrespect to high-temperature processes, and increased resistance againsttwist. However, the present inventive concept does not limit the moldingmember 150 to that illustrated herein. Alternatively, the molding member150 may be formed to extend beyond the height of the semiconductor chip140 or to cover the semiconductor chip 140.

The plurality of connecting via holes 152 and 157 extend through themolding member 150 to expose the plurality of connecting conductors 135,respectively. The plurality of connecting via holes 152 and 157 may beformed by a laser drilling process using a laser. With respect to atleast one of the plurality of connecting via holes 152 and 157, that is,a first connecting via hole 157, a planar distance from the firstconnecting conductor 135 exposed by the first connecting via hole 157 toan entrance of the first connecting via hole 157 is not uniform.

The term “planar distance from the first connecting conductor 135 to anentrance of the first connecting via hole 157” used herein may denote adistance from an outer contour line of the first connecting conductor135 to an outer contour line of the first connecting via hole 157 whenthe semiconductor package is viewed from above, that is, in a planeview.

As shown in FIG. 1, distances from a planar outer contour line 157P ofat least one of the plurality of connecting via holes 152 and 157, thatis, the first connecting via hole 157, to a planar outer contour line135P of the first connecting conductors 135 is not uniform, as shown onthe right-hand side of FIG. 1.

By contrast, the planar outer contour line 152P of connecting via holes152 disposed on the left-hand side in FIG. 1 are spaced a uniformdistance apart from the planar outer contour line 135P of the connectingconductors 135. More specifically, as shown in FIG. 1, when theconnecting conductors 135 are spherical or hemispherical, the entranceof the connecting via hole 152 exposing the connecting conductor 135 isalso circular. Accordingly, the planar outer contour line 135P of theconnecting conductor 135 and the planar outer contour line 152P of theconnecting via hole 152 are both circular. In addition, the planar outercontour line 135P of the connecting conductor 135 and the planar outercontour line 152P of the connecting via hole 152 are concentricallyformed.

On the other hand, returning to the examples on the right-hand side ofFIG. 1, the planar outer contour line 157P of connecting via holes 157disposed on the right-hand side in FIG. 1 are spaced a non-uniformdistance apart from the planar outer contour line 135P of the firstconnecting conductors 135. Moreover, the centers of the planar outercontour line 135P of the first connecting conductor 135 and the planarouter contour line 157P of the first connecting via hole 157 may be atdifferent positions from each other. In this case, as shown in theexample on the right-hand side of FIG. 1, the planar outer contour line135P of the first connecting conductor 135 and the planar outer contourline 157P of the first connecting via hole 157 may have the same shape,for example, a circular shape.

However, the planar outer contour line 135P of the first connectingconductors 135 and the planar outer contour line 157P of the firstconnecting via hole 157 may have different sizes. For example, planarshapes of the first connecting conductors 135 and the first connectingvia hole 157 may both be real circle shapes. Here, the outer contourline 135P of the first connecting conductors 135 may be disposed withinthe outer contour line 157P of the first connecting via hole 157, or aportion of the outer contour line 135P of the first connectingconductors 135 may protrude outside the outer contour line 157P of thefirst connecting via hole 157.

In some other exemplary embodiments, the planar outer contour line 135Pof the first connecting conductors 135 and the planar outer contour line157P of the first connecting via hole 157 may have different shapes anddifferent sizes. In such cases, for example, the planar shape of thefirst connecting conductors 135 may be a real circle shape, and theplanar shape of the first connecting via hole 157 may be an oval shape.Likewise the outer contour line 135P of the first connecting conductors135 may be disposed within the outer contour line 157P of the firstconnecting via hole 157, or a portion of the outer contour line 135P ofthe first connecting conductors 135 may protrude outside the planarouter contour line 157P of the first connecting via hole 157.

That is to say, as shown in the right side of FIG. 1, with respect toone of the first connecting conductors 135, a distance between theplanar outer contour line 135P of the first connecting conductor 135 andthe planar outer contour line 157P of the first connecting via hole 157is not uniform. In this case, the center of the first connectingconductor 135 and the center of the first connecting via hole 157 may bepositioned at different positions. Accordingly, the center of the planarouter contour line 135P of the first connecting conductor 135 and thecenter of the planar outer contour line 157P of the first connecting viahole 157 might not be concentric in some cases.

In other words, the center of at least one first connecting via hole 157of the plurality of connecting via holes 152 and 157 may be positionedat a position different from that of the first connecting conductors 135that are exposed by the first connecting via hole 157. As describedabove, the center of the first connecting conductors 135 and the centerof the first connecting via hole 157 may denote the center of the planarouter contour line 135P of the first connecting conductor 135 and thecenter of the planar outer contour line 157P of the first connecting viahole 157, respectively.

Further, in some other exemplary embodiments, the center of the firstconnecting conductor 135 and the center of the first connecting via hole157 may be positioned at the same position. In this case, a distancebetween the planar outer contour line 135P of the first connectingconductor 135 and the planar outer contour line 157P of the firstconnecting via hole 157 is still not uniform. For example, a planarshape of the first connecting conductor 135 may be a real circle shape,and a planar shape of the first connecting via hole 157 may be an ovalshape while still having the same center.

In the semiconductor package according to exemplary embodiments, thefirst connecting via hole 157 exposing the first connecting conductor135 may be formed in various shapes to prevent a connecting conductordisposed within the first connecting via hole 157 from outflowing fromthe first connecting via hole 157 and contacting an adjacent connectingconductor. In other words, a space can be formed within the firstconnecting via hole 157 in which the connecting conductor is disposed byvarying arrangement relationships between the first connecting via hole157 and the first connecting conductor 135, that is, planar shapes,center positions, a distance between outer contour lines, etc. Further,in a case of using laser drilling when a connecting via hole is formed,the connecting via hole having various shapes can be more easily formed.

Hereinafter, various arrangements of the first and second connecting viaholes relative to first and second connecting conductors, respectively,will be described with reference to FIGS. 2A to 2C and FIGS. 3A to 3C.FIGS. 2A to 2C are plan views illustrating arrangement of a firstconnecting via hole relative to a first connecting conductor, and FIGS.3A to 3C are cross-sectional views illustrating variously shapedsidewalls of the first connecting via hole.

The plurality of connecting conductors may include a first connectingconductor 135 a and a second connecting conductor 135 b disposed inadjacent with each other, and a plurality of connecting via holes mayinclude a first connecting via hole 157 a exposing the first connectingconductor 135 a and a second connecting via hole 157 b exposing thesecond connecting conductor 135 b.

As shown in FIG. 2A, the center A1 of the first connecting conductor 135a and the center B1 of the first connecting via hole 157 a may bepositioned at different positions. In addition, the center A2 of thesecond connecting conductor 157 a and the center B2 of the secondconnecting via hole 157 b may also be positioned at different positions.Alternatively, assuming that a distance between the center A1 of thefirst connecting conductor 135 a and the center A2 of the secondconnecting conductor 135 b is denoted as a first distance D1 and adistance between the center B1 of the first connecting via hole 157 band the center B2 of the second connecting via hole 157 b is denoted asa second distance D2, the second distance D2 may be greater than thefirst distance D1.

Accordingly, a planar distance between the first connecting via hole 157a and the first connecting conductor 135 a is reduced as outer contourlines of the first connecting via hole 157 a and the first connectingconductor 135 a become closer to the second connecting conductor 135 b.In addition, a planar distance between the first connecting via hole 157a and the first connecting conductor 135 a is increased as outer contourlines of the first connecting via hole 157 a and the first connectingconductor 135 a become farther from the second connecting conductor 135b. In other words, an internal space of the molding member 150 providedby the first connecting via hole 157 a and the second connecting viahole 157 b is small in a region where the first connecting conductor 135a and the second connecting conductor 135 b are adjacent to each other,and the internal space of the molding member 150 provided by the firstconnecting via hole 157 a and the second connecting via hole 157 b islarge in a region where the first connecting conductor 135 a and thesecond connecting conductor 135 b are spaced apart from each other,making the internal space serve as a kind of buffer space.

Accordingly, when the connecting conductors of the upper semiconductorpackage are connected to the first connecting conductor 135 a and thesecond connecting conductor 135 b, they may extend toward the relativelywide space to the outside of the first and second connecting conductors135 a, 135 b as shown in FIG. 2A, that is, to a region where the firstconnecting conductor 135 a and the second connecting conductor 135 b arespaced apart from each other, thereby preventing a short circuit betweenadjacent connecting conductors.

As shown, planar shapes of the first connecting conductor 135 a and thesecond connecting conductor 135 b may be the same as those of the firstconnecting via hole 157 a and the second connecting via hole 157 b,while sizes of the first connecting conductor 135 a and the secondconnecting conductor 135 b may be different from those of the firstconnecting via hole 157 a and the second connecting via hole 157 b. Forexample, the first and second connecting conductor 135 a and 135 b andthe first and second connecting via holes 157 a and 157 b in FIG. 2A areall formed in real circle shapes, and sizes, e.g., diameters, of thereal circle shapes of the first connecting via hole 157 a and the secondconnecting via hole 157 b may be larger than sizes, e.g., diameters, ofthe first connecting conductor 135 a and the second connecting conductor135 b. Accordingly, when the first connecting conductor 135 a and thesecond connecting conductor 135 b are disposed within the firstconnecting via hole 157 a and the second connecting via hole 157 b,respectively, a sufficient large buffer region for connecting theconnecting conductors of the upper semiconductor package can be secured.Therefore, a short circuit between adjacent connecting conductors can beprevented.

FIG. 2A illustrates that the centers of the first connecting conductor135 a and the second connecting conductor 135 b which are adjacent toeach other are positioned at different positions from the centers of thefirst connecting via hole 157 a and the second connecting via hole 157b. However, in some other exemplary embodiments, the center of at leastone of the first connecting conductor 135 a and the second connectingconductor 135 b, for example, the center A1 of the first connectingconductor 135 a, and the center B1 of the first connecting via hole 157a are disposed at different positions, and the center A2 of the secondconnecting conductor 135 b and the center B2 of the second connectingvia hole 157 b may be positioned at the same position.

Referring FIG. 2B, the center A1 of the first connecting conductor 135 aand the center B1 of the first connecting via hole 157 a are stilldisposed at different positions from the center A2 of the secondconnecting conductor 135 b and the center B2 of the second connectingvia hole 157 b.

Likewise, assuming that a distance between the center A1 of the firstconnecting conductor 135 a and the center A2 of the second connectingconductor 135 b is denoted as a first distance D1 and a distance betweenthe center B1 of the first connecting via hole 157 b and the center B2of the second connecting via hole 157 b is denoted as a second distanceD2, the second distance D2 may be greater than the first distance D1.

However, as shown in FIG. 2B, a planar shape of the first connectingconductor 135 a and the second connecting conductor 135 b and a planarshape of first connecting via hole 157 a and the second connecting viahole 157 b may be different from each other. For example, the planarshapes of the first connecting conductor 135 a and the second connectingconductor 135 b may be real circle shapes while the planar shapes of thefirst connecting via hole 157 a and the second connecting via hole 157 bmay be oval shapes.

As described above, since the first connecting via hole 157 a and thesecond connecting via hole 157 b extending through the molding member150 are formed to have different planar shapes as those of the firstconnecting conductor 135 a and the second connecting conductor 135 b, asufficiently large buffer region for connecting conductors of the uppersemiconductor package can be secured on the first connecting conductor135 a and the second connecting conductor 135 b disposed within thefirst connecting via hole 157 a and the second connecting via hole 157b, respectively. Therefore, a short circuit between adjacent connectingconductors can be prevented.

Further, FIG. 2B illustrates that the centers of the first connectingconductor 135 a and the second connecting conductor 135 b are bothdisposed at different positions from the centers of the first connectingvia hole 157 a and the second connecting via hole 157 b, respectively.However, in some other exemplary embodiments, the center of at least oneof the first connecting conductor 135 a and the second connectingconductor 135 b disposed adjacent to each other, for example, the centerA1 of the first connecting conductor 135 a may be positioned at aposition different from the center B1 of the first connecting via hole157 a, and the center A2 of the second connecting conductor 135 b may bepositioned at the same position as the center B2 of the secondconnecting via hole 157 b.

Referring to FIG. 2C, the center A1 of the first connecting conductor135 a and the center B1 of the first connecting via hole 157 a may bepositioned at the same position. In addition, the center A2 of thesecond connecting conductor 135 b and the center B2 of the secondconnecting via hole 157 b may also be positioned at the same position.Here, similar to the case described above, a planar distance from thefirst and second connecting conductors 135 a and 135 b to entrances ofthe first and second connecting via holes 157 a and 157 b, respectively,may not be uniform. The first and second connecting conductors 135 a and135 b may have different shapes from those of the first and secondconnecting via holes 157 a and 157 b, respectively. For example, planarshapes of the first and second connecting conductors 135 a and 135 b maybe real circle shapes, and planar shapes of the first and secondconnecting via holes 157 a and 157 b may be oval shapes.

As described above, a sufficiently large buffer region for connectingthe connecting conductors of the upper semiconductor package can besecured on the first connecting conductor 135 a and the secondconnecting conductor 135 b disposed within the first connecting via hole157 a and the second connecting via hole 157 b, respectively, extendingthrough the molding member 150 by forming the first connecting via hole157 a and the second connecting via hole 157 b to have different planarshapes as those of the first connecting conductor 135 a and the secondconnecting conductor 135 b, respectively.

Therefore, a short circuit between adjacent connecting conductors can beprevented.

As shown in FIGS. 2B and 2C, when the first connecting via hole 157 aand the second connecting via hole 157 b are formed to have planarlyoval shapes, the planar shape of each of the connecting via holes 157 aand 157 b may have a long axis and a short axis. Here, the long axisdenotes a line connecting two focuses of the oval, and the short axisdenotes a line perpendicular to the line connecting two focuses of theoval.

As shown in FIG. 2B, the long axes of the first connecting via hole 157a and the second connecting via hole 157 b may be disposed on a line Mconnecting the center A1 of the first connecting conductor 135 a and thecenter A2 of the second connecting conductor 135 b. As shown in FIG. 2C,alternatively, the long axes of the first connecting via hole 157 a andthe second connecting via hole 157 b may be disposed perpendicular tothe center line M connecting the center A1 of the first connectingconductor 135 a and the center A2 of the second connecting conductor 135b.

When the first connecting via hole 157 a and the second connecting viahole 157 b are formed in planarly oval shapes, the long axis of each ofthe connecting via holes 157 a and 157 b may be arranged in variousmanners relative to the center line M. However, when the center B1 ofthe first connecting via hole 157 a and the center A1 of the firstconnecting conductor 135 a are disposed at the same position, the longaxis of the first connecting via hole 157 a is at an angle other than 0degrees with respect to the center line M.

Further, although FIGS. 2A to 2C illustrate the first and secondconnecting conductors 135 a and 135 b and the first and secondconnecting via holes 157 a and 157 b are arranged perpendicular to thecenter line M and symmetrical to the line passing the mid point of thecenter A1 of the first connecting conductor 135 a and the center A2 ofthe second connecting conductor 135 b, the present inventive concept isnot limited thereto. For example, the planar shape and the centerposition of the first connecting via hole 157 a may be different fromthose of the second connecting via hole 157 b.

Referring to FIGS. 3A to 3C, first and second sidewalls S1 and S2 of thefirst and second connecting via holes 157 a and 157 b may have differentshapes.

More specifically, the first connecting via hole 157 a and the secondconnecting via hole 157 b may each have a first sidewall S1 and a secondsidewall S2 defined as surfaces of the molding member 150. In addition,as shown in FIGS. 3A and 3B, the first sidewall S1 and the secondsidewall S2 of the first and second connecting via holes 157 a and 157 bmay have a first slope θ1 and a second slope θ2, respectively, withrespect to the surface of the molding member. That is, the firstsidewall S1 of the first connecting via hole 157 a may have a firstslope θ1, and the second sidewall S2 of the first connecting via hole157 b may have a second slope θ2, and the first sidewall S1 of thesecond connecting via hole 157 b may have the first slope θ1, and thesecond sidewall S2 of the second connecting via hole 157 b may have thesecond slope θ2.

As shown in FIG. 3A, the first slope θ1 and the second slope θ2 of thefirst connecting via hole 157 a may be the same with each other. Thesecond connecting via hole 157 b may have a first sidewall S1 and asecond sidewall S2 having the same slope.

However, the first sidewall S1 opposite to the second sidewall S2 atwhich the first connecting conductor 135 a and the second connectingconductor 135 b are disposed may be farther from the first connectingconductor 135 a and the second connecting conductor 135 b than thesecond sidewall S2.

As shown in FIG. 3B, with respect to the first connecting via hole 157 aand the second connecting via hole 157 b exposing the first connectingconductor 135 a and the second connecting conductor 135 b disposedadjacent to each other, the first slope θ1 of the first sidewall S1 andthe second slope θ2 of the second sidewall S2 of each connecting viahole may be different from each other.

More specifically, the second sidewalls S2 of the first connecting viahole 157 a and the second connecting via hole 157 b are closer to eachother than the first sidewalls S1 of the first connecting via hole 157 aand the second connecting via hole 157 b. The second slope θ2 of thefirst connecting via hole 157 a is larger than the first slope θ1 of thefirst connecting via hole 157 a and the second slope θ2 of the secondconnecting via hole 157 b is larger than the first slope θ1 of thesecond connecting via hole 157 b.

In addition, as shown in FIG. 3C, at least one of the first sidewall S1and the second sidewall S2 of at least one of the first connecting viahole 157 a and the second connecting via hole 157 b may be formedstepwise. FIG. 3C illustrates the second sidewall S2 of the firstconnecting via hole 157 a and the second sidewall S2 of the secondconnecting via hole 157 b are formed in a tilted manner, and the firstsidewalls S1 of the first connecting via hole 157 a and the secondconnecting via hole 157 b opposite to the second sidewalls S2 are formedstepwise. However, FIG. 3C illustrates only an exemplary embodiment, andalternative embodiments may also be made. That is to say, at least oneof the first sidewall S1 and the second sidewall S2 of the firstconnecting via hole 157 a and at least one of the first sidewall S1 andthe second sidewall S2 of the second connecting via hole 157 b may beformed stepwise. Alternatively, in addition to the exemplary embodimentsshown in FIGS. 3A to 3C, the variously shaped sidewalls capable ofproviding a buffer region in a connecting via hole may be implemented.In addition, in a case of forming a connecting via hole using laserdrilling, connecting via holes having various shapes can be easilyformed.

Alternatively, the above-described exemplary embodiments shown in FIGS.2A to 2C and FIGS. 3A to 3C can be combined in various manners. Forexample, by combining the exemplary embodiments shown in FIGS. 2A and3C, at least one of sidewalls may be formed stepwise while formingconnecting conductors and connecting via holes in planarly real circleshapes. Additionally, one of ordinary skill in the art will understandthat a variety of combinations may be made, and detailed explanations ofthe respective combinations will not be given for the sake of brevityand convenient description.

Further, arrangement relationships between a plurality of connectingconductors 135 disposed on a substrate 110 and a plurality of connectingvia holes 152 and 157 will be described with reference to FIGS. 4 and 5.FIG. 4 is a view illustrating a connecting conductor region to define aplurality of connecting conductors arranged on a substrate, and FIG. 5is a partially enlarged view of an ‘A’ portion of FIG. 4.

As shown in FIG. 4, the substrate 110 includes connecting conductorregions a and b in which the plurality of connecting conductors 135 arearranged, the connecting conductor regions a and b corresponding tosides of the substrate 110 and corners of the substrate 110,respectively. While FIG. 4 illustrates that the connecting conductors135 are arranged in a row in the first region a, they may also bearranged in a plurality of rows, or in a non-uniform arrangement.

As shown in FIG. 5, among the plurality of connecting conductors 135, agroup of connecting conductors arranged in the second region b may beexposed according to the first connecting via hole 157. Morespecifically, planar distances from the connecting conductors 135arranged in the second region b to entrances of the correspondingconnecting via holes 157 are not uniform. Alternatively, centers of theconnecting conductors 135 arranged in the second region b may bedifferent from the centers of the corresponding connecting via holes157. Alternatively, centers of the connecting conductors 135 arranged inthe second region b may have different planar shapes from those ofcenters of the corresponding connecting via holes 157 while being at thesame positions as the center of the corresponding connecting via holes157. Here, planar distances from the connecting conductors 135 arrangedin the second region a to entrances of connecting via holes 152 may beuniform.

As described above, enough space other than a space in which connectingconductors of an upper semiconductor package are connected on the regionwhere the connecting conductors 135 are disposed can be formed byvarying planar shapes of the first connecting via hole 157 exposing theconnecting conductors 135 in corner regions. Accordingly, a shortcircuit between adjacent connecting conductors, which frequently occursat a corner region, can be prevented.

Further, in a case of using laser drilling when the connecting via holes157 are formed, the connecting via holes 157 having various shapes canbe more easily formed, thereby reducing processing burdens.

Alternatively, the connecting via holes 157 having various shapes can beemployed in both the connecting conductor regions a and b where theplurality of connecting conductors 135 are disposed as well as thecorner region. That is to say, the connecting conductors 135 disposed inthe first region a and the second region b may be exposed by theconnecting via holes 157 having various shapes. In other words, withrespect to the connecting conductors 135 disposed on the connectingconductor regions a and b, a planar distance from the contour line ofthe connecting conductors 135 to the contour line of the contour line ofthe connecting via holes 157 may be made such that they are not uniform.

Hereinafter, a package on package according to an exemplary embodimentwill be described with reference to FIGS. 6 and 7. FIG. 6 is a viewillustrating a process of stacking an upper semiconductor package on asemiconductor package according to an exemplary embodiment, and FIG. 7is a cross-sectional view illustrating a package on package having anupper semiconductor package stacked on a semiconductor package accordingto an exemplary embodiment. Here, since the first semiconductor package100 shown in FIGS. 6 and 7 has the same configuration as thesemiconductor packages according to the above-described exemplaryembodiments, a detailed description thereof will be omitted.

Referring to FIGS. 6 and 7, the package on package includes a firstsemiconductor package 100 and a second semiconductor package 200. Here,the first semiconductor package 100 may be referred to as a lowersemiconductor package and the second semiconductor package 200 may bereferred to as an upper semiconductor package.

More specifically, the first semiconductor package 100 includes a firstsubstrate 110, a first semiconductor chip 140 attached to a top surfaceof the first substrate 110, a plurality of connecting conductors 135disposed on the top surface of the first substrate 110, a molding member150 formed on the first substrate 110 to provide space and structuralsupport for the plurality of connecting conductors 135 and the firstsemiconductor chip 140, and a plurality of connecting via holes 152 and157 extending through the molding member 150 to expose the plurality ofconnecting conductors 135, respectively. The second semiconductorpackage 200 includes a second substrate 210, and a second semiconductorchip 240 attached to a top surface of the second substrate 210. Thesecond semiconductor package 200 is stacked on the first semiconductorpackage 100.

Here, a planar distance from a first connecting conductor 135 exposed byat least one of the plurality of connecting via holes 152 and 157, thatis, a first connecting via hole 157, of the first semiconductor package100, to an entrance of the first connecting via hole 157, is notuniform.

That is, the semiconductor package 100 according to the exemplaryembodiment may be applied to the lower semiconductor package 100 of thepackage on package shown in FIGS. 6 and 7. For example, the connectingvia holes 157 shown in FIGS. 2A to 2C and FIGS. 3A to 3C may be appliedto at least one of the plurality of connecting via holes 152 and 157 ofthe lower semiconductor package 100.

Accordingly, at least one of the connecting via holes 152 and 157exposing the connecting conductors 135 of the lower semiconductorpackage 100, that is, the first connecting via hole 157, may include abuffer space for connecting conductors 225 of the upper semiconductorpackage 200. Therefore, even if the connecting conductors 135 of thelower semiconductor package 100 are connected to the connectingconductor 225 of the upper semiconductor package 200, it is possible toprevent the first connecting via hole 157 from outflowing.

That is to say, it is possible to prevent a short circuit from occurringbetween adjacent connecting conductors 135 when the upper semiconductorpackage 200 is stacked on the lower semiconductor package 100.Accordingly, reliability of the package on package can be furtherimproved.

While exemplary embodiments been particularly shown and described, itwill be understood by those of ordinary skill in the art that variouschanges in form and details may be made therein without departing fromthe spirit and scope of the present inventive concept as defined by thefollowing claims. It is therefore desired that the exemplary embodimentsbe considered in all respects as illustrative and not restrictive,reference being made to the appended claims rather than the foregoingdescription to indicate the scope of the present inventive concept.

1. A semiconductor package comprising: a substrate; a semiconductor chipattached to a surface of the substrate; a plurality of connectingconductors which provide connections to the semiconductor chip; and amold formed on the substrate for holding the semiconductor chip andcomprising a plurality of via holes which expose corresponding ones ofthe connecting conductors through the mold, wherein, for a first viahole of the plurality of via holes, a planar distance between aconnecting conductor exposed by the first via hole and an entrance ofthe first via hole is not uniform.
 2. The semiconductor package of claim1, wherein, for a second via hole of the plurality of via holes, aplanar distance between a connecting conductor exposed by the second viahole and an entrance to the second via hole is uniform.
 3. Thesemiconductor package of claim 1, wherein a center of the connectingconductor exposed by the first via hole is offset from a center of thefirst via hole.
 4. The semiconductor package of claim 3, wherein aplanar shape of the connecting conductor exposed by the first via holeis different than a planar shape of the first via hole.
 5. Thesemiconductor package of claim 1, wherein a planar shape of theconnecting conductor exposed by the first via hole is different than aplanar shape of the first via hole.
 6. A semiconductor packagecomprising: a substrate; a semiconductor chip attached to a surface ofthe substrate; a connecting conductor disposed on the surface of thesubstrate; a molding member formed on the substrate and in which theconnecting conductor and the semiconductor chip are provided; and a viahole extending through the molding member and exposing the connectingconductor, wherein the connecting conductor is disposed in the via holethat is formed in an outermost area of the molding member, from across-sectional view the connecting conductor contacts the moldingmember at a first point and a second point, wherein a first distancebetween the first point and an entrance of the via hole near the firstpoint is greater than a second distance between the second point and anentrance of the via hole near the second point.
 7. The semiconductorpackage of claim 6, wherein a first slope of a first side of the viahole formed between the first point and an entrance of the via hole nearthe first point is smaller than a second slope of a second side of thevia hole formed between the second point and an entrance of the via holenear the second point.
 8. The semiconductor package of claim 6, whereina center of the connecting conductor exposed by the via hole is offsetfrom a center of the via hole.
 9. A semiconductor package comprising: asubstrate; a semiconductor chip attached to a surface of the substrate;a connecting conductor disposed on the surface of the substrate; amolding member formed on the substrate and in which the connectingconductor and the semiconductor chip are provided; and a via holeextending through the molding member and exposing the connectingconductor, wherein the connecting conductor is disposed in the via holethat is formed in an outermost area of the molding member, from across-sectional view the connecting conductor contacts the moldingmember at a first point and a second point, wherein a first side of thevia hole formed between the first point and an entrance of the via holenear the first point has a different slope from a second side of the viahole formed between the second point and an entrance of the via holenear the second point.
 10. The semiconductor package of claim 9, whereina planar shape of the connecting conductor and a planar shape of the viahole are both a real circle shape.
 11. The semiconductor package ofclaim 9, wherein a planar shape of the connecting conductor is a realcircle shape, and a planar shape of the via hole is an oval shape.
 12. Apackage on package comprising: a first semiconductor package including afirst substrate, a first semiconductor chip attached to a surface of thefirst substrate, a connecting conductor disposed on the surface of thefirst substrate, a molding member formed on the first substrate andhaving a space for the connecting conductor and the first semiconductorchip, and a via hole extending through the molding member and exposingthe connecting conductor; and a second semiconductor package including asecond substrate and a second semiconductor chip attached to a surfaceof the second substrate and stacked on the first semiconductor package,wherein the connecting conductor is disposed in the via hole that isformed in an outermost area of the molding member, from across-sectional view the connecting conductor contacts the moldingmember at a first point and a second point, wherein a first distancebetween the first point and an entrance of the via hole near the firstpoint is greater than a second distance between the second point and anentrance of the via hole near the second point.
 13. The package onpackage of claim 12, wherein a first slope of a first side of the viahole formed between the first point and an entrance of the via hole nearthe first point is different from a second slope of a second side of thevia hole formed between the second point and an entrance of the via holenear the second point.
 14. The package on package of claim 13, whereinthe second slope is greater than the first slope.